| 摘要 |
PROBLEM TO BE SOLVED: To reduce forward voltage and stabilize it by a method, wherein in an alternated strain layer an (AlGa)InP thin layer of a plurality of different compositions as a dislocation trap is used for decreasing an evoked defects density changing from an upper side clad layer to a window layer. SOLUTION: A distribution AlGaAs Bragg reflector layer 3 is formed on the surface of a GaAs substrate 2, and a first lower side AlGaInP clad layer 4 is grown thereon. An AlGaInP active layer 5, a second upper side AlGaInP clad layer 6, and an AlGaInP alternated strain layer 7 are sequentially laminated and formed on the AlGaInP clad layer 4. In a structure of the AlGaInP alternated strain layer 7, an (AlGa)InP thin layer of plural different compositions is used as a dislocation trap for decreasing an induced defects density changing from the upside clad layer 6 to a window layer 8 on the alternated strain layer 7. |
