发明名称 MANUFACTURE OF SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To ensure a sufficient contact area of a contact plug to an upper conductive layer in forming the upper conductive layer connected to the contact plug, thereby manufacturing a semiconductor device, without causing the continuity failure such as contact resistance, etc., even if borderless contacts occur. SOLUTION: An insulation layer 1 is formed on a lower conductive layer, columnar contact plugs 6 are buried in a base 11 so as to be exposed on the top face of the insulation layer 1 and to be electrically connected to the lower conductive layer, and a metal wiring (upper conductive layer) 10 electrically connected to the contact plugs 6 on the insulation layer 1 of the base 11. Prior to this step of forming the metal wiring (upper conductive layer) 10, a step of forming trenches 13 for exposing the side walls of the contact plugs 6 on the insulation layer 1 around the contact plugs 6 is executed.
申请公布号 JP2000174117(A) 申请公布日期 2000.06.23
申请号 JP19980345421 申请日期 1998.12.04
申请人 SONY CORP 发明人 KURIHARA HISAAKI
分类号 H01L21/768;(IPC1-7):H01L21/768 主分类号 H01L21/768
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