SEMICONDUCTOR WAFER POLISHING PAD, ITS RECLAIMING METHOD, AND POLISHING METHOD USING THE SAME

摘要

PROBLEM TO BE SOLVED: To eliminate damages on a metal layer and a mixture of grindstone particles, reduce a wiring fail, further prolong the services life of a polishing pad, and further completely reclaim polishing capacity. SOLUTION: In this polishing pad 100, metal films laminated on a surface of a semiconductor wafer are used at a step of flattening while an abradant is supplied, and they are coated with a diamond thin film 101 on a substrate formed with recess and projection patterns. The abradant uncontaining grindstone particles is supplied, while the metal films formed on the semiconductor wafer are polished with a polishing pad coated with the diamond thin film on the substrate formed with the recess and projection patterns.