| 摘要 |
PROBLEM TO BE SOLVED: To obtain a method for manufacturing and a structure of semiconductor waveguide element, wherein an optical circuit can be made with high accuracy in the boundary part between a passive waveguide and an active element, and these can be connected very smoothly and continuously. SOLUTION: In a method for manufacturing and a structure of a semiconductor waveguide element, wherein a passive waveguide 20 and an active element 30 are integrated monolithically on a semiconductor substrate 1, a passive wave guide structure layer is epitaxially grown on the semiconductor substrate 1, a double heterostructure layer turning to an active element is epitaxially grown contiguously on it, an optical circuit 40 for connecting the passive waveguide 20 and the active element 30 is patterned in the surface thereof, the region other than the region becoming the optical circuit 40 is removed by etching to form the optical circuit 40, and then the double heterostructure layer in the region other than the region used as the active element 30 is removed by selective etching to form the passive waveguide 20 and the active element 30. |
