发明名称 SEMICONDUCTOR DEVICE AND ITS MANUFACTURE
摘要 <p>PROBLEM TO BE SOLVED: To form an active matrix circuit and peripheral logic circuits for driving the same using a crystal TFT on one and the same substrate. SOLUTION: A semiconductor device has several thin film transistors including a semiconductor film formed on an insulating substrate. The semiconductor film of at least one thin film transistor has alignment in the direction of the planes (111), (220) and (311). The ratio of the reflected intensity of the plane (111) to the sum of reflection intensities of the planes (111), (220) and (311) is 90% or more. The semiconductor film having alignment in the direction of the planes (111), (220) and (311) grows its crystal in the direction parallel to the insulating substrate.</p>
申请公布号 JP2000174289(A) 申请公布日期 2000.06.23
申请号 JP20000019281 申请日期 2000.01.27
申请人 SEMICONDUCTOR ENERGY LAB CO LTD 发明人 CHO KOYU
分类号 G09F9/30;G02F1/136;G02F1/1362;G02F1/1368;H01L21/20;H01L21/336;H01L21/77;H01L21/84;H01L29/786;(IPC1-7):H01L29/786 主分类号 G09F9/30
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