| 摘要 |
PROBLEM TO BE SOLVED: To ensure excellent heat removing properties and water resistance without causing instability of characteristics due to temperature rise or lowering of output due to cutting in finish process by providing an insulation layer, a gap film, and an insulation layer having a specified film composition as an insulating film, e.g. an overcoat, on a wafer substrate. SOLUTION: The film forming face of an alumina titanium carbide water substrate 11 comprising a specified wt.% of alumina and the remainder of titanium carbide is mirror finished and an AlNO film is formed thereon by RF magnetron sputtering using an AlN sintered material as a target. Film face of the AlNO is then polished by MCP to have a specified film face roughness and an insulation layer 12 of a film composition represented by a composition formula Al-N(1-x)-Ox (where, 0.055<=x<=0.8) is formed on the surface thus obtaining a wafer 10 for magnetic head. |
