SEMICONDUCTOR CONTROLLED RECTIFYING DEVICE

摘要

PROBLEM TO BE SOLVED: To improve di/dt resistance and turn-off characteristic by reducing emitter short-circuiting effect and enhancing the gate sensitivity of an auxiliary thyristor. SOLUTION: This rectifying device is provided with a second NE layer arranged opposite to an auxiliary thyristor 12, a cathode emitter electrode 3 formed thereon, and an anode electrode formed on the main surface of the opposite side of a main surface on which the cathode emitter electrode 3 is formed. The auxiliary thyristor 12 is provided with a plurarity of through holes 13 in an area not covering a boundary section between a first NE layer surface and a PB layer surface. In the embodiment, the first NE layer is formed concentrically in a manner to surround a main gate electrode 1, and the second NE layer is formed concentrically on its outer periphery.