| 摘要 |
PROBLEM TO BE SOLVED: To form a linear composition gradient and a parabolic composition gradient by a method, wherein band gap energy of a current diffusion layer is made larger than a window layer, and made smaller than a clad layer, and also a carrier concentration of the current diffusion layer is made lower than the window layer, and higher than the clad layer. SOLUTION: A distribution AlGaAs Bragg reflector layer 3 is formed on the surface of a GaAs substrate 2, and a first lower side AlGaInP clad layer 4, an active layer 5, a second upper side AlGaInP clad layer 6, and an AlGaInP current diffused layer 7 are laminated and formed sequentially on the distribution AlGaAs Bragg reflector layer 3. Band gap energy of the current diffused layer 7 is made larger than that of a window layer 8 on the current diffused layer 7, and is made smaller than that of an upside clad layer 6. Furthermore, the carrier concentration of the current diffused layer 7 is made lower than the window layer 8 and is made higher than that of the upper side clad layer 6. |
