| 摘要 |
PROBLEM TO BE SOLVED: To provide a schottky barrier semiconductor device and a method of manufacturing the same which has a low self-loss and totally different characteristics from those of a schottky diode. SOLUTION: A schottky barrier semiconductor device is provided with a schottky barrier layer which forms a schottky barrier in contact with a semiconductor layer on the surface of the silicon semiconductor layer. The schottky barrier layer comprises a titanium layer 14 having at least titanium silicide 14a at a plane contacting the semiconductor layer, and a titanium nitride layer 15 is formed on the schottky barrier layer. |
