| 摘要 |
PROBLEM TO BE SOLVED: To enable a low-damage treatment by a method wherein the distance between an induction antenna, which is a plasma generating means, and a wafer to be treated or a susceptor supporting the wafer is set at a distance of a value higher than a specified value. SOLUTION: In the constitution, wherein a high-frequency energy fed to a coil-shaped antenna 1 and raw gas, such as oxygen gas, sent through a feed opening 3 are fed in an insulator 2 and a vacuum tank 7, and a wafer 5 on a susceptor 6 is treated with an oxygen radical within a plasma, which is produced with a high-frequency energy, of a plasma ashing device, the distance Z between the plasma and a wafer 5 is set about 150 mm or longer. Further, a cylindrical ground electrode 8 is installed on the outer periphery of the insulator 2 in the vicinity of a coil 1. The electrode 8 is earthed by making the electrode 8 electrically couple with the tank 7 or the like. By using a plasma source produced by this constitution, the capacity coupling property of the plasma with the wafer 5 can be reduced. As a result, a low-damage ashing treatment becomes possible. |
