| 摘要 |
PROBLEM TO BE SOLVED: To manufacture a semiconductor device having a single gate structure and n- and p-type transistors of a surface channel type by forming fixed changes in a gate oxide film. SOLUTION: Trench-isolated regions 2, active region p-wells 3 and n-wells 4 are formed on a p-type Si substrate 1 surface, a gate oxide film 5 is formed over the isolated regions 2 and the active regions 3, 4, a P-doped polycrystalline Si layer 13 is formed thereon, LLD regions 8 of n-channel MOSFETs and LLD regions 9 of p-channel MOSFETs are formed, side walls 10 are formed on gate electrodes 13 and a gate oxide film 5, n+ source-drain regions 11 of the n-channel MOSFETs and p+ source-drain regions 12 of the p-channel MOSFETs are formed, and a potential is applied between an electrode connected to the gate electrode 13 and an electrode connected to the n+ region on the n-well 4 to form fixed negative charges 14 in the gate oxide film 5.
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