| 摘要 |
PROBLEM TO BE SOLVED: To provide a dry etching method whereby a wiring pattern can be formed with ensuring a sufficient remaining quantity of resist, without giving damage to a base in manufacturing a semiconductor device. SOLUTION: The etching method comprises steps of forming a resist on a conductor layer, patterning the resist after the exposure and development of the resist, applying a first etching to the conductor layer through the resist used as a mask to remove the conductor layer at regions with relatively wide pattern spacings, executing a second plasma etching in the condition that the straight advancing properly of the ion beam is lower than that in the first plasma etching, thereby removing the conductor layer at regions with relatively narrow pattern spacings, and removing the resist.
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