发明名称 MICROWAVE PLASMA TREATING DEVICE
摘要 PROBLEM TO BE SOLVED: To reduce the size of a device as a whole and carry out uniform plasma treatment even when a substrate to be treated is large in diameter by generating standing waves in microwaves propagated inside a tubular member and distributing concentrically a plurality of high electric field strength areas, based on the standing waves in the radial direction of the tubular member. SOLUTION: Microwaves generated from a microwave oscillator 20 are introduced from an introducing part 13 of an antenna 11 toward an annular part 12 via a waveguide tube 21 and propagated in a dielectric body inside the annular pat 12 as oppositely directed traveling waves. In the annular part 12, both traveling waves collide mutually in the position facing an inlet port 13A so as to generate standing waves. In this way, electric current showing a maximum value at a fixed interval flows on the inside face of the annular part 12, and on both sides of a slit 15, a potential difference is generated between the inside and the outside of the annular part 12, so that an electric field is radiated to a microwave introducing plate 4 from the slit 15. The respective slits 15 are positioned radially between the adjacent strong electric field strength areas, the electric field of a strong electric field strength leaks from each of the slits 15, and this electric field penetrates the microwave inlet plate 4 to be introduced uniformly to all the areas of a treating container 1.
申请公布号 JP2000173797(A) 申请公布日期 2000.06.23
申请号 JP19980341906 申请日期 1998.12.01
申请人 SUMITOMO METAL IND LTD 发明人 MATSUMOTO NAOKI
分类号 H01L21/302;C23C16/50;C23C16/511;C23F4/00;H01L21/3065;H05H1/46 主分类号 H01L21/302
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