| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing, at low costs, a semiconductor device for using a capacitor with a low parasitic resistance and a capacitor with a small parasitic capacity. SOLUTION: In a method for manufacturing a semiconductor device, the lower electrode of a MIS capacitor 88 is formed by an N+ diffusion layer 62b and the lower electrode of a MIM capacitor 89 is formed by a polycrystalline Si film 66b. Then, an opening 71a for the N+ diffusion layer 62b and an opening 71b for the polycrystalline Si film 66b are simultaneously formed on an SiO2 film 68, and SiN films 72a and 72b that are the capacitance dielectric films of the MIS capacitor 88 and the MIM capacitor 89 are simultaneously formed on the openings 71a and 71b.
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