SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE AND MANUFACTURE THEREOF

摘要

PROBLEM TO BE SOLVED: To speed up a semiconductor integrated circuit device comprising DRAM by improving read/write rate for memory cell information with no degraded reliability. SOLUTION: A titanium silicide film 22 is formed through a silicon film 21 on an impurity semiconductor region 11 of a memory cell selecting MISFETQs where a bit line BL is formed, and a plug 20 formed inside a connection hole 19 is made of a metal film, so that the bulk resistance and contact resistance of a plug 20 are reduce with no erosion of a semiconductor substrate 1 by the titanium silicide film 22.