| 摘要 |
PROBLEM TO BE SOLVED: To enhance the current driving capability of a PMOS to speed up an LSI by setting the film thickness so that a gate oxide film on the PMOS is thinner than a gate oxide film on an NMOS and specified equations are met for a power voltage. SOLUTION: An NMOS gate oxide film 12A having a thickness Toxp and a PMOS gate oxide film 12B having a thickness Toxn are formed on NMOS and PMOS gate electrodes 14A, 14B, using an n+ polysilicon, so that the thickness Toxp is less than the Toxn and an equation 1-(0.8/Vdd)<=Toxp/Toxn<1 is met for a power voltage Vdd. Thus, it is possible to improve the current driving capability of PMOS and raise the current driving capability of PMOS to operate a semiconductor device having a CMOS structure using an n+ polysilicon for the gate electrode, without grading the gate breakdown voltage characteristic. |
