| 摘要 |
PROBLEM TO BE SOLVED: To form a capacitance part having an increased cell capacitance and providing a good leakage current characteristic by using a high m.p. metal nitride material for a storage node electrode of the cell capacitance. SOLUTION: As a storage node electrode 1 a thin tungsten nitride film is formed using tungsten hexafluoride gas, a halogen-based high m.p. metal gas, and ammonia gas, a high m.p. metal film on a third interlayer insulation film 15 is removed, a protective PR in a cylindrical hole and the third interlayer insulation film 15 are removed to form a cylindrical storage node electrode 1, it is lamp-annealed using ammonia gas, etc., a tantalum oxide capacitor insulation film 2 is formed on the node electrode 1, the compacting process is applied to improve the leakage characteristic, using the UV-O2 annealing, and a reactively sputtered TiN is formed as a plate electrode 3, thereby forming a semiconductor device. |
