| 摘要 |
<p>PROBLEM TO BE SOLVED: To prevent degradation in the properties as much as possible. SOLUTION: A thin film transistor is provided with an active layer 4 of non single crystal silicon which is formed on a transparent insulating substrate, and has a first conductivity type channel region 6 and a source region 7, and a drain region 8 of second conductivity type which is different from the first conductivity type; a gate insulating film 12 formed on the active layer 4; and a gate electrode 14 formed on the gate insulating film 12. The end of gate electrode 12 of the drain side is in the offset position from the junction between the drain region 8 and the channel region 6.</p> |
