| 摘要 |
PROBLEM TO BE SOLVED: To eliminate the need for photolithography method and to manufacture a semiconductor memory in a shorter time a conventional art, by forming an etch stopping film which has resistance against etching on a third insulating film formed around a contact hole. SOLUTION: An etching stopping film 14 are used as etching stoppers, which have been already grown with resistance against etching of third insulating films 15 formed around contact holes. The third insulating film 15 is etched to a height B, and upper parts of the polysilicon plugs 17 are exposed. When the etching reaches the nitride film 14 acting as etch stopper, the etching is stopped. Next, polysilicon films composed for doped with films are grown. Then, etching back and insulation is performed such that the polysilicon film is not brought into condition with the adjacent polysilicon plugs 17. |
