| 摘要 |
PROBLEM TO BE SOLVED: To prevent the generation of foreign matters in a treating chamber by eliminating a deposition of reaction products, which are generated on the inner wall of the treating chamber by etching, by a method wherein the low-temperature part of a plasma generating part in a container is warmed by an electromagnetic wave absorber. SOLUTION: Deposition amount of reaction products which are generated on the inner wall of a treating chamber at the time of an etching treatment is great in the vicinity of the outermost peripheral part of a shower plate 3, which is also a high-frequency transmitting window, and these reaction products are separated from the outermost peripheral part to turn into a foreign matter source, which is generated in the chamber. In this case as the main cause due to the deposition amount of the reaction products, a fact is mentioned that the temperature of the plate 3 is low. There, for raising the temperature of the outer peripheral part of the plate 3, a ring 13 formed by forming an SiC, for example, into a ring shape using a microwave absorber, is provided to bring it into contact with the plate 3, and the outer peripheral part of the plate 3 is heated by this ring 13. Thereby, the reaction products does not deposit on the inner wall of the chamber, the generation of foreign matters in the chamber can be prevented. |
