| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device, where a peripheral light exposure is applied, and a part of a metal, wiring layer which is formed on the peripheral region of a silicon wafer and separated off by etching and scattered away or be suspended in cleaning chemicals when a silicon wafer is cleaned, is prevented from attaching to the other parts of the wafer. SOLUTION: In a case where a semiconductor device to which peripheral light exposure is applied is manufactured, a part around a silicon oxide film formed as a base layer is removed through a peripheral part removing process, a metal wiring layer 23 is formed on a silicon oxide film 21, the metal wiring layer 23 is subjected to a peripheral part removing process, and a part around the metal wiring layer 23 of the same area with a part around the silicon oxide 21 is removed. |
