SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor device having high-performance circuits which are formed with TFT's exhibiting small variations in characteristics. SOLUTION: An undercoat 11 and a semiconductor film 12 are formed on a quartz substrate 10 successively without exposing then the air. After crystallizing the semiconductor film by using a catalytic element, the catalytic element is removed. A TFT formed in such a process exhibits extremely small variations in electrical properties such as threshold voltage and sub-threshold coefficient. Accordingly, a circuit susceptible to variations in characteristics of the TFT such as differential amplifier circuit can be formed.