| 摘要 |
PROBLEM TO BE SOLVED: To reduce the manufacturing time and prevent recrystallization of amorphous Si by depositing amorphous Si by the plasma CVD to form a lower electrode. SOLUTION: Source-drain regions 120 and a silicon dioxide layer 130 are formed on a substrate 110, this layer 130 can be formed by a low pressure CVD process using tetraethoxysilane as a reactive gas, the photolithography, etc., are applied to form openings for node contacts in the silicon dioxide layer 130, the low pressure CVD is separately executed to deposit a doped Si in the openings 140, thus forming node contacts 150, and the plasma CVD is executed to deposit a doped amorphous Si layer 160a on the silicon dioxide layer 130. Since the plasma CVD is executed in an adequate low temp. condition, the amorphous Si layer 160a never be recrystallized. |
