MANUFACTURE OF SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To efficiently etch a silicon substrate uniformly at a low cost to reduce the cost. SOLUTION: The manufacturing method comprises steps of manufacturing an Si substrate 32 having an Si-on-sapphire (SOI) structure from an Si substrate 31 with an oxide film 31a formed thereon, and cutting the Si substrate 31 having the oxide film 31a into a thin film. The plasma etching condition applied to this thin film forming step is such that the product PL of the discharge pressure P of a mixed gas contg. O and F to be fed into a treating chamber and the inter-electrode distance L ranges between 2.5 Pa.m and 15 Pa.m, in which condition the plasma discharge is executed between the parallel flat plate electrodes.