| 摘要 |
PROBLEM TO BE SOLVED: To provide a parallel plate type CVD film formation equipment which can prevent generation of particles due to the peeling of a CVD film. SOLUTION: This CVD film formation equipment has, in a reaction chamber, an upper parallel plate 60 having a hollow part 38 inside, a lower parallel plate 28 which is located below the upper plate face to face with it to be mounted with a wafer, and a lifter 30 for moving the lower plate up and down against the upper one. The upper plate is provided with a first gas inlet 36 and a second gas inlet 62, both being formed on an upper face of the plate, and a shower head 64 extended over almost the entire surface of a lower face. The shower head has partition walls 74 for separating a peripheral region from a central region. A first cleaning gas is let in through the first gas inlet and is passed through the hollow part to be diffused from the central region of the shower head. The second gas inlet is connected to a gas lead-in pipe 66 which is passed through the hollow part and has a gas outlet 68 in the peripheral region of the shower head. A second cleaning gas which is different in composition from the first gas is introduced through the second gas inlet and is diffused into the reaction chamber from the peripheral region of the shower head.
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