| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device wherein H is easily permeable, without increasing the mask number or lithography number, and the forming gas anneal processing can be effectively executed. SOLUTION: A layer insulation film 22 covers a semiconductor substrate 1 and an electrode 21 of a transistor 20 formed on the semiconductor substrate 1. A nitrogen-containing insulation film layer 6 exists in the insulation film 22 exclusive of the top the electrode 21. In a corresponding part of the insulation film 22 to the top of the electrode 21, no nitrogen-containing insulation film layer 6 exists or a nitrogen-containing insulation film layer 6 exists which is thinner than the nitrogen-containing insulation film layer 6 existing in the insulation film 22 exclusive of the electrode 21 top.
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