| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a inexpensive semiconductor storage by enabling replacing a defective memory cell of a memory cell array by a redundant memory cell having small scale, and increasing the number of redundant relievable addresses, in a semiconductor storage provided with redundant relieving function. SOLUTION: A memory array 1 has a memory cell having double gate structure, plural word lines to which a control gate of the memory cell is connected, and plural bit lines to which a drain of the memory cell is connected. A redundant memory cell 10 is a redundant memory cell in which a control gate and a drain are connected to a wiring being different from plural word lines and plural bit lines. A redundant address storing section 12 stores a relieving address. A redundancy discriminating section 13 compares the relieving address with an input address and discriminates relieving operation. A redundancy selecting circuit 16 receives an output of the redundancy relieving discriminating section 13, and accesses the redundant memory cell 10.</p> |
