| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device and the manufacturing method thereof whereby an interposition layer between contact holes and a conductive material layer for forming buried electrodes can be easily removed for a comparatively short time and the connection failure of the buried electrodes can be suppressed. SOLUTION: An insulation layer 2 is formed on a semiconductor substrate 1, contact holes 3 are bored in the insulation layer 2, a metal film 4 is deposited on the insulation layer 2, it is heat-treated to form a first interposition layer 6 made of a compound of the metal film with the constituent material of the semiconductor substrate 1 beneath the contact holes 3, the metal film 4 is selectively removed to form a second interposition layer 9 in the contact holes 3 and on the insulation layer 2, with leaving the first intermediate layer 6, a conductive material is deposited on the insulation layer 2 with the second interposition layer 9 to fill the contact holes 3 with this material, and the conductive material layer on the insulation layer 2 and the second interposition layer 9 are etched back to form buried electrodes 8.
|
