| 摘要 |
PROBLEM TO BE SOLVED: To reduce the resistance of a Cu wiring and avoid diffusing Cu in an interlayer film. SOLUTION: A benzocyclobutene(BCB)-made interlayer insulation film 11 is deposited, wiring trenches 12 are formed in this insulation film 11, Cu ion 13 is implanted in the insulation layer 11 surface by the sputtering method using an ionized metal plasma to form a lower layer Cu film 14 of 10 nm on the insulation film 11 surface such that Cu is implanted in the BCB surface of the insulation film 11 to enhance the adhesion of BCB to the lower Cu film 14, then a Cu film 15 is deposited by the CVD method to bury the wiring trenches 12, and the Cu film 15 outside the wiring trenches 12 and the lower layer Cu film 14 are removed by polishing to obtain a Cu wiring 16. Forming the lower layer Cu film 14 on the lower layer of the Cu film 15 by sputtering avoids diffusing Cu in the BCB interlayer insulation film 11. All the interiors of the trenches 12 are of the film of Cu, a low resistance metal, to result in the low-resistance Cu wiring 16.
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