| 摘要 |
PROBLEM TO BE SOLVED: To improve the performance and reliability of a wiring layer, which includes a barrier metal film. SOLUTION: This method includes a step of forming grooves on an insulating film 10 composed of a silicon oxide film and the like on a semiconductor substrate (substrate) 1, a step forming a barrier metal film 12 on sides and bottoms of the grooves and a surface of the insulating film 10, a step of reducing a thickness of the barrier metal film 12 on the surface of the insulating film 10 other than on or around the grooves, and a step of after a wiring metallic layer 13 is stacked on the semiconductor substrate 1, removing the barrier metal film 10 and a wiring metallic layer 13 on the insulating film 10 by CMP (chemomechanical polishing) method so as to form a wiring layer, which is composed of the wiring metallic layer 13 and the barrier metal films 12 burried in the grooves.
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