| 摘要 |
PROBLEM TO BE SOLVED: To form a high quality conductive plug or wire without causing voids even when a contact hole or the wire is fined. SOLUTION: This semiconductor device comprises: an insulated layer 20 having an opening part 22 formed on an underlayer substrate 10; and a conductive layer 32 formed within the opening part. The conductive layer comprises: a first plating layer 28 formed by a first plating method; and a second plating layer 30 formed by a second plating method in which a current and voltage supplying method is different from the first plating method. The first plating method is any one of a DC plating method, a constant current pulse plating method, a periodic reverse current pulse plating method, and an asymmetrical AC plating method. The second plating method is any one of a DC plating method, a constant current pulse plating, method, a periodic reverse current pulse plating method, and an asymmetrical AC plating method.
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