| 摘要 |
The invention relates to a symmetrically blocking power semiconductor component, for example an IGBT, in which a zone (11) of the second conductivity type is formed between the pn junction for forward blocking, which is formed by a first base region (1) of the first conductivity type and a second base region (3) of a second conductivity type, and a pn junction for reverse blocking which is formed on a chip edge of the first base region (1) and a marginal region (30) of the second conductivity type. Said zone (11) of the second conductivity type is doped so weakly that all free charge carriers are removed therefrom already at a low voltage. The inventive power semiconductor component allows emission of the electrical field in both directions of blocking in the same area of the chip surface. |
