HIGH TEMPERATURE CHEMICAL VAPOR DEPOSITION CHAMBER

摘要

An apparatus for wafer processing, which comprises a chamber body (250) and a heated liner (200) which are thermally isolated from each other by isolating pins (220). During wafer processing, e.g., deposition of titanium nitride film by thermal reaction between titanium tetrachloride and ammonia, a wafer substrate (564) is heated to a reaction temperature in the range of 600-700 DEG C by a heated support pedestral. The chamber liner and the interior chamber walls are maintained at a temperature between 150-250 DEG C to prevent deposition of undesirable by-products inside the chamber. This facilitates the chamber cleaning procedure, which can be performed using an in-situ chlorine-based process. The excellent thermal isolation between the heated liner and the chamber body allows the chamber exterior to be maintained at a safe operating temperature of 60-65 DEG C. A heated exhaust assembly is also used in conjunction with the process chamber to remove exhaust gases and reaction by-products. External heaters are used to maintain the exhaust assembly at a temperature of about 150-200 DEG C to minimize undesirable deposits on the interior surfaces of the exhaust assembly.