| 摘要 |
<p>A lateral thin-film Silicon-On-Insulator (SOI) JFET device includes a semiconductor substrate, a buried insulating on the substrate, and a JFET device in a thin semiconductor layer of a first conductivity type on the buried insulating layer. The device includes a source region of the first conductivity type, a control region of a second conductivity type which is laterally spaced apart from the source region and a lateral drift region of the first conductivity type adjacent to the control region. A drain region of the first conductivity type is provided laterally spaced apart from the control region in a first lateral direction by the lateral drift region, and at least one field plate electrode is provided over at least a major portion of the lateral drift region and is insulated from the drift region by an insulation region. The control region includes control region segments which are spaced apart in a second lateral direction perpendicular to the first lateral direction by portions of the thin semiconductor layer, thus providing a normally 'on' JFET device.</p> |
