PROCESS FOR PRODUCING EPITACTIC-SILICON GERMANIUM LAYERS

摘要

A method for producing relaxed epitaxy layers on a semiconductor substrate by an epitaxy process, particularly molecular beam epitaxy, with a hydrogen source, wherein the following steps occur during an in situ process sequence: a hydrogencontaining intermediate layer is deposited on the substrate surface or diffused into the substrate near the surface; a strained epitaxy layer is grown on this intermediate layer; and the epitaxial layer subsequently is relaxed by a temperature treatment. A preferred layer sequence formed according to the above method includes a substrate of silicon with a hydrogen-containing intermediate layer that is deposited thereon or diffused into the substrate surface; a relaxed Si1-x Ge x epitaxial layer with a germanium concentration of x = 0-1 to 0.3 as a first buffer layer; a hydrogen-containing intermediate layer deposited on or diffused into an outer surface of the first buffer layer; a Si1-x Ge x relaxed epitaxy layer with a germanium concentration of x = 0.3 to 0.5 as second buffer layer; and, a Si1-x Ge x component structure. Additional relaxed Si1-x Ge x epitaxy layers with increasing germanium concentrations up to a maximum x = 1 may be disposed between the second buffer layer and the component structure layer.