| 摘要 |
<p>A high resolution patterning method of a resist layer is disclosed by patternwise irradiation of a resist layer with electron beam utilizing a polysubstituted triphenylene compound as the electron beam resist material, which is graphitised and made insoluble in both polar and non-polar organic solvents for electron doses greater than 2 x 10?-3 C/cm2¿, and which undergoes cleavage of the adduct chains and extensive de-aromatization of the triphenylene core therefore enhancing the solubility in polar solvents only for electron doses between 3 x 10-4 and 2 x 10?-3 C/cm2¿. The thus formed positive or negative tone resist layer is highly resistant against dry etching to ensure the utility of the method in fine patterning work for the manufacture of semiconductor devices.</p> |
