| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor manufacturing apparatus in which an abrasive cloth to be used at the time of CMP(chemical mechanical polishing) processing a wafer is surface-processed, and a wetness for a slurry and water on the surface is enhanced. SOLUTION: In this manufacture, a polishing cloth 11 for use in CMP processing a semiconductor wafer is surface-processed with a chemical solution, a surface-active agent, or the like having oxidation action such as a hydrogen peroxide solution, a potassium permanganate, a nitric acid, a nitrous acid, ozone water, ion water, or the like, and the surface is made hydrophile. The surface of the polishing cloth is made hydrophile, thereby enhancing a wetness for the slurry and water. After a step of the CMP process of polishing the formed film on the semiconductor wafer by the polishing cloth, while the slurry containing polishing particles is supplied, a step of hydrophile-processing the surface of the polishing cloth is executed. A dressing process or brushing process is executed by use of a dresser 12 so that the polishing cloth used for the CMP process can again be CMP-processed, and the hydrophile processing can also be executed in the above process.
|
