Semiconductor device and manufacturing method therefor

摘要

An active matrix display device comprising at least one thin film transistor provided over a substrate; an interlayer insulating film over the at least one thin film transistor; a light emitting element provided over the interlayer insulating film and electrically connected to the thin film transistor, the light emitting element including, a first electrode provided over the interlayer insulating film and electrically connected to the thin film transistor; a light emitting layer formed over the first electrode, the light emitting layer comprising an organic material; and a second electrode formed over the light emitting layer so that the light emitting layer is interposed between the first and second electrodes; a cover covering the light emitting element, wherein a gap between the light emitting element and the cover is filled with an adhesive whereby the light emitting element is covered by the adhesive.