Quantum conductive recrystallization barrier layers for semiconductor devices

摘要

Reduced scale structures of improved reliability and/or increased composition options are enabled by the creation and use of quantum conductive recrystallization barrier layers. The quantum conductive layers are preferably used in trench capacitors between: the interface (58) of conductive strap (56) and substrate (60); the interface (62) of trench electrode (50) and strap (56); or the interface (64) of collar oxide (48) and strap (56) to act as recrystallization barriers.
The quantum conductive barrier layer can be selected from the group consisting of silicon nitride, silicon oxynitride, alumina, germanium oxide and yttria-stabilized zirconia, and can have a thickness of about 5-30 Å .