| 摘要 |
<p>In a one-chip microcomputer that incorporates a nonvolatile memory in which data can be electrically erased and data can be written and read, as a program memory, a reference nonvolatile memory group 40 which is lower in characteristic than a nonvolatile memory 7 in a memory cell array is disposed, and, on the basis of a result of reference of the reference nonvolatile memory group 40, the erase voltage of an erasing operation which is previously stored in a specific address region of the nonvolatile memory 7 is changed by a control circuit 44. On the basis of a result of reference of the reference nonvolatile memory group 40, the reference level of a reading operation of a sense amplifier which is previously stored in a specific address region of the nonvolatile memory 7 is changed by the control circuit 44. <IMAGE></p> |
