发明名称 |
Semiconductor interconnect structure employing a pecvd inorganic dielectric layer and process for making same |
摘要 |
<p>An inorganic dielectric anti-reflective coating (ARC) layer used in semiconductor interconnect structures for facilitating the use of thin photoresist layers while preserving the integrity of the photoresist pattern (304, 306, 308) for deep sub-micron feature sizes. The inorganic dielectric ARC layer also functions as a hard mask during metal etching thereby further enhancing the integrity of metallic microelectronic structures. <IMAGE></p> |
申请公布号 |
EP1011135(A2) |
申请公布日期 |
2000.06.21 |
申请号 |
EP19990204265 |
申请日期 |
1999.12.13 |
申请人 |
CONEXANT SYSTEMS, INC. |
发明人 |
HSIA, SHAO-WEN;BRONGO, MAUREEN R. |
分类号 |
H01L21/027;H01L21/3213;(IPC1-7):H01L21/768 |
主分类号 |
H01L21/027 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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