发明名称 |
Thin film transistor with reduced parasitic capacitance |
摘要 |
An improved thin film transistor structure is provided having no source/gate or drain/gate overlap. A laser doping technique is applied to fabricate such transistors. Eliminating source/gate and drain/gate overlap significantly reduces or eliminates parasitic capacitance and feed-through voltage between source and gate. Short-channel a-Si:H thin film transistors may be obtained having high field effect mobilities. Improved pixel performance and pixel-to-pixel uniformity is provided. <IMAGE> |
申请公布号 |
EP0902481(A3) |
申请公布日期 |
2000.06.21 |
申请号 |
EP19980115454 |
申请日期 |
1998.08.17 |
申请人 |
XEROX CORPORATION |
发明人 |
MEI, PING;LUJAN, RENE A.;BOYCE, JAMES B.;CHUA, CHRISTOPHER L.;HACK, MICHAEL G. |
分类号 |
H01L21/223;H01L21/225;H01L21/266;H01L21/336;H01L27/144;H01L27/146;H01L29/786;H01L31/0216 |
主分类号 |
H01L21/223 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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