| 发明名称 |
Damascene process for reduced feature size |
| 摘要 |
Submicron contacts/vias and trenches are provided in a dielectric layer by forming an opening having an initial dimension and reducing the initial dimension by depositing a second dielectric material in the opening.
|
| 申请公布号 |
US6077773(A) |
申请公布日期 |
2000.06.20 |
| 申请号 |
US19970974687 |
申请日期 |
1997.11.19 |
| 申请人 |
ADVANCED MICRO DEVICES, INC. |
发明人 |
LIN, MING-REN |
| 分类号 |
H01L21/311;H01L21/768;H01L23/522;H01L23/532;(IPC1-7):H01L21/476 |
主分类号 |
H01L21/311 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
|
| 地址 |
|
