发明名称 |
Method and apparatus for rapidly discharging plasma etched interconnect structures |
摘要 |
Disclosed is a method for making reliable interconnect structures on a semiconductor substrate having a first dielectric layer. The method includes plasma patterning a first metallization layer that lies over the first dielectric layer. Forming a second dielectric layer over the first metallization layer and the first dielectric layer. Forming a plurality of tungsten plugs in the second dielectric layer, such that each of the plurality of tungsten plugs are in electrical contact with the first metallization layer. Plasma patterning a second metallization layer over the second dielectric layer and the plurality of tungsten plugs, such that at least a gap over at least one of the tungsten plugs is not covered by the second metallization layer and a positive charge is built-up on at least part of the second metallization layer. The method further includes contacting the second metallization layer with a conductive liquid that is electrically grounded. In this manner, the positive charge that is built-up on the at least part of the second metallization layer is neutralized to prevent tungsten plug erosion.
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申请公布号 |
US6077762(A) |
申请公布日期 |
2000.06.20 |
申请号 |
US19970995652 |
申请日期 |
1997.12.22 |
申请人 |
VLSI TECHNOLOGY, INC. |
发明人 |
LIANG, VICTOR C.;BOTHRA, SUBHAS;SUR, JR., HARLAN LEE |
分类号 |
H01L21/02;H01L21/306;H01L21/3213;H01L21/768;(IPC1-7):H01L21/320 |
主分类号 |
H01L21/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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