发明名称 PRODUCTION OF SPUTTERING TARGET FOR FORMING OPTICAL DISK PROTECTIVE FILM
摘要 PROBLEM TO BE SOLVED: To obtain a target in which particles generated at the time of forming a film by sputtering are reduced and suitable for the formation of a dielectric protective film of an optical disk. SOLUTION: This is a sputtering target for forming a ZnS-SiO2 optical disk protective film in which 0.1 to 10% α phase as a high temp. phase is allowed to contain in the crystal phase of the target, and by executing sintering at >=1000 deg.C by not pressing or the like or executing heat treatment at a high temp. of >=1000 deg.C after sintering at a low temp., the α phase as a high temp. phase is formed in the crystal phase.
申请公布号 JP2000169958(A) 申请公布日期 2000.06.20
申请号 JP19980345603 申请日期 1998.12.04
申请人 JAPAN ENERGY CORP 发明人 OHASHI TAKEO;KUWANO KATSUO;TAKAMI HIDEO
分类号 G11B7/26;B22F3/14;B22F3/15;C04B35/14;C04B35/547;C23C14/34 主分类号 G11B7/26
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