发明名称 |
PRODUCTION OF SPUTTERING TARGET FOR FORMING OPTICAL DISK PROTECTIVE FILM |
摘要 |
PROBLEM TO BE SOLVED: To obtain a target in which particles generated at the time of forming a film by sputtering are reduced and suitable for the formation of a dielectric protective film of an optical disk. SOLUTION: This is a sputtering target for forming a ZnS-SiO2 optical disk protective film in which 0.1 to 10% α phase as a high temp. phase is allowed to contain in the crystal phase of the target, and by executing sintering at >=1000 deg.C by not pressing or the like or executing heat treatment at a high temp. of >=1000 deg.C after sintering at a low temp., the α phase as a high temp. phase is formed in the crystal phase. |
申请公布号 |
JP2000169958(A) |
申请公布日期 |
2000.06.20 |
申请号 |
JP19980345603 |
申请日期 |
1998.12.04 |
申请人 |
JAPAN ENERGY CORP |
发明人 |
OHASHI TAKEO;KUWANO KATSUO;TAKAMI HIDEO |
分类号 |
G11B7/26;B22F3/14;B22F3/15;C04B35/14;C04B35/547;C23C14/34 |
主分类号 |
G11B7/26 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|