发明名称 |
Method for fabricating a transistor gate with a T-like structure |
摘要 |
A method for fabricating a field effect transistor (FET) with a T-like gate structure includes forming a silicon nitride layer over a silicon substrate and patterning it to form an opening that exposes the substrate. A dielectric layer is formed on a lower portion of each side-wall of the opening so that the opening has a T-like free space. A doped polysilicon layer fills the T-like free space through only one deposition. After performing a planarization on the doped polysilicon layer, a titanium metal layer is formed over the substrate. A self-aligned titanium silicide is formed over the substrate other than the dielectric layer surface through a rapid thermal process (RTP). A selective etching process is performed to remove the remaining titanium metal layer. After removing the dielectric layer a RTP is performed again to reform the crystal structure of the titanium silicide layer so as to reduce its resistance. A T-like gate structure is formed.
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申请公布号 |
US6077761(A) |
申请公布日期 |
2000.06.20 |
申请号 |
US19980206178 |
申请日期 |
1998.12.04 |
申请人 |
UNITED INTEGRATED CIRCUIT CORP. |
发明人 |
CHEN, WENG-YI;CHEN, KUEN-CHU |
分类号 |
H01L21/28;H01L21/336;H01L21/8234;H01L29/423;(IPC1-7):H01L21/28 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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