发明名称 |
Method for forming a DRAM having improved capacitor dielectric layers |
摘要 |
A method of fabricating a DRAM device having nitride/oxide or tantalum pentoxide dielectric layers. The method includes: forming field oxide regions on a substrate to define active regions; forming at each active region a MOSFET comprising a top dielectric layer; forming a contact window in the MOSFET top dielectric layer; generating a doped poly-Si bottom electrode of a capacitor in electrical connection with the MOSFET through the contact window; removing surface oxide of the bottom electrode using both chemical and inductive coupled plasma (ICP) treatments; depositing nitride/oxide dielectric layers or a tantalum pentoxide dielectric layer on the ICP-treated bottom electrode; generating a doped poly-Si top electrode of the capacitor.
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申请公布号 |
US6077737(A) |
申请公布日期 |
2000.06.20 |
申请号 |
US19980089015 |
申请日期 |
1998.06.02 |
申请人 |
MOSEL VITELIC, INC. |
发明人 |
YANG, MING-TA;CHU, CHIH-HSUN |
分类号 |
H01L21/02;H01L21/314;H01L21/316;H01L21/8242;(IPC1-7):H01L21/824 |
主分类号 |
H01L21/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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