发明名称 |
Methods of forming a silicon nitride film, a capacitor dielectric layer and a capacitor |
摘要 |
A method of forming silicon nitride includes, a) forming a first layer comprising silicon nitride over a substrate; b) forming a second layer comprising silicon on the first layer; and c) nitridizing silicon of the second layer into silicon nitride to form a silicon nitride comprising layer, said silicon nitride comprising layer comprising silicon nitride of the first and second layers. Further, a method of forming a capacitor dielectric layer of silicon nitride includes, a) forming a first capacitor plate layer; b) forming a first silicon nitride layer over the first capacitor plate layer; c) forming a silicon layer on the silicon nitride layer; d) nitridizing the silicon layer into a second silicon nitride layer; and e) forming a second capacitor plate layer over the second silicon nitride layer. Also, a method of forming a capacitor dielectric layer over a capacitor plate layer includes, a) forming a first layer of dielectric material over a capacitor plate layer; b) conducting a pin-hole widening wet etch of the first layer; and c) after the wet etch, forming a pin-hole plugging second layer of dielectric material on the first layer and within the widened pin-holes.
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申请公布号 |
US6077754(A) |
申请公布日期 |
2000.06.20 |
申请号 |
US19980018925 |
申请日期 |
1998.02.05 |
申请人 |
SRINIVASAN, ANAND;SHARAN, SUJIT;SANDHU, GURTEJ S. |
发明人 |
SRINIVASAN, ANAND;SHARAN, SUJIT;SANDHU, GURTEJ S. |
分类号 |
H01L21/02;H01L21/318;(IPC1-7):H01L21/318 |
主分类号 |
H01L21/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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