发明名称 Indium gallium nitride light emitting diode
摘要 A transparent conductive layer is deposited between the electrode and the semiconductor diode to spread the current evenly to the diode and to reduce the series resistance. Tin indium oxide can be used as the transparent conductive layer. The transparent conductive layer is particularly applicable to a blue light emitting diode, where InGaN is used as the light emitting layer.
申请公布号 US6078064(A) 申请公布日期 2000.06.20
申请号 US19980071519 申请日期 1998.05.04
申请人 EPISTAR CO. 发明人 MING-JIUNN, JOU;BIING-JYE, LEE;TARN, JACOB C.;CHUAN-MING, CHANG;CHIA-CHENG, LIU
分类号 H01L33/32;H01L33/42;(IPC1-7):H01L33/00 主分类号 H01L33/32
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