| 摘要 |
PROBLEM TO BE SOLVED: To obtain a flat thin film having not domain structure and excellent in etching characteristics even when ITO thin film used for transparent electrodes, etc., of flat panel displays is formed at a substrate temperature not lower than crystallization temperature. SOLUTION: This metal oxide sintered compact comprises In, Sn, Al and O and has Al content (atom ratio) satisfying the formula Al/ (In+Sn+Al)>=0.1 and <2.0. A deposition material is obtained by using the metal oxide sintered compact. A sputtering target is obtained by using the metal oxide sintered compact. A transparent electroconductive film for equipment of flat panel display, touch panel, etc., comprising In, Sn and Al and having an Al content (atomic ratio) satisfying the formula Al/ (In+Sn+Al)>=1.0 and <2.0 is formed by using the sputtering target. |
